Semiconductor integrated circuit

ABSTRACT

A power source circuit includes a voltage converter circuit and a control circuit that includes a voltage divider circuit and a protective circuit. The protective circuit includes a first oxide semiconductor transistor in which an off-state current is increased as temperature is increased, a capacitor that accumulates the off-state current as electric charge, a second oxide semiconductor transistor, and an operational amplifier including a non-inverting input terminal to which a reference voltage is input. The first oxide semiconductor transistor is provided near the voltage converter circuit or an element that generates heat in the control circuit.

BACKGROUND OF THE INVENTION

1. Field of the Invention

One embodiment of the disclosed invention relates to a semiconductorintegrated circuit.

2. Description of the Related Art

In recent years, the number and the kinds of components used forelectric devices, such as an IC, have been markedly increased because ofa variety of usages or specifications of electric devices. In order tooperate such components, a power source circuit that supplies voltageand current corresponding to each component is needed (see PatentDocument 1.)

REFERENCE Patent Document

-   [Patent Document 1] Japanese Published Patent Application No.    2011-96699

SUMMARY OF THE INVENTION

However, such an electric device having a number of and a variety kindsof components generates heat in operation of the above-described powersource circuit, so that the power source circuit is broken because ofthe heat; moreover, the electric device is broken because of the heat.

In view of the above, an object of one embodiment of the disclosedinvention is to prevent a power source circuit from being broken becauseof heat.

An object of one embodiment of the disclosed invention is to provide aprotective circuit to prevent the power source circuit from being brokenbecause of heat.

One embodiment of the disclosed invention relates to a semiconductorintegrated circuit that includes a voltage converter circuit and acontrol circuit including a voltage divider circuit and a protectivecircuit. The protective circuit includes a first oxide semiconductortransistor in which an off-state current is increased as temperature isincreased, a capacitor that accumulates the off-state current aselectric charge, a second oxide semiconductor transistor, and anoperational amplifier. The first oxide semiconductor transistor isprovided near an element that generates heat in the voltage convertercircuit or the control circuit.

The first oxide semiconductor transistor provided near the element thatgenerates heat is affected by the heat and when the temperature of thefirst oxide semiconductor transistor is increased, a leakage current ofthe first oxide semiconductor transistor in an off state is increased(hereinafter, in this specification, a leakage current of an oxidesemiconductor transistor in an off state is referred to as an off-statecurrent.). The off-state current is accumulated in the capacitor aselectric charge. When the electric charge is accumulated in thecapacitor, voltage of a portion electrically connected to the firstoxide semiconductor transistor, the capacitor, and an inverting inputterminal of the operational amplifier is increased. When the voltage ofthe portion is increased and exceeds a first reference voltage input toa non-inverting input terminal of the operational amplifier, the outputvoltage of the operational amplifier shifts in the positive direction.In this way, it can be detected that the temperature of the elementprovided near the first oxide semiconductor transistor reaches apredetermined temperature.

In this manner, the temperature of an element that generates heat can bedetected and the operation of the element that generates heat isstopped, so that the temperature of the element that generates heat canbe prevented from exceeding an operating temperature limit.

Provision of such a protective circuit can prevent a semiconductorintegrated circuit from being broken because of heat.

In one embodiment of the disclosed invention, the control circuitincludes a bias generation circuit, a reference voltage generationcircuit, a band gap reference, and a voltage regulator circuit.

In one embodiment of the disclosed invention, the voltage convertercircuit is a DC-DC converter.

In one embodiment of the disclosed invention, the voltage convertercircuit is an AC-DC converter.

One embodiment of the disclosed invention can prevent a power sourcecircuit from being broken because of heat.

One embodiment of the disclosed invention can provide a protectivecircuit to prevent a power source circuit from being broken because ofheat.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram of a semiconductor integrated circuit.

FIG. 2 is a circuit diagram of a semiconductor integrated circuit.

FIG. 3 is a graph showing a relation between an off-state current andtemperature.

FIGS. 4A and 4B are cross-sectional views of oxide semiconductortransistors.

FIGS. 5A and 5B are top views each illustrating an arrangement of anoxide semiconductor transistor.

FIG. 6 is a cross-sectional view illustrating an arrangement of an oxidesemiconductor transistor.

FIGS. 7A to 7E each illustrate a crystal structure of an oxide material.

FIGS. 8A to 8C illustrate a crystal structure of an oxide material.

FIGS. 9A to 9C illustrate a crystal structure of an oxide material.

FIGS. 10A and 10B each illustrate a crystal structure of an oxidematerial.

FIGS. 11A and 11B are a top view and a cross-sectional view,respectively, of a semiconductor device.

FIGS. 12A and 12B are a top view and a cross-sectional view,respectively, of a semiconductor device.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the invention disclosed in this specification arehereinafter described with reference to the accompanying drawings. Notethat the invention disclosed in this specification can be carried out ina variety of different modes, and it is easily understood by thoseskilled in the art that the modes and details of the invention disclosedin this specification can be changed in various ways without departingfrom the spirit and scope thereof Therefore, the present invention isnot construed as being limited to description of the embodiments. Notethat, in the drawings hereinafter shown, the same portions or portionshaving similar functions are denoted by the same reference numerals, andrepeated description thereof is omitted.

Note that in the invention disclosed in this specification, asemiconductor device refers to an element or a device in general whichfunctions by utilizing a semiconductor and includes, in its category, anelectric device including an electronic circuit, a display device, alight-emitting device, and the like and an electronic appliance on whichthe electric device is mounted.

Note that the position, size, range, or the like of each structure shownin the drawings and the like is not accurately represented in some casesfor easy understanding. Therefore, the disclosed invention is notnecessarily limited to the position, size, range, or the like asdisclosed in the drawings and the like.

In this specification and the like, ordinal numbers such as “first”,“second”, and “third” are used in order to avoid confusion amongcomponents, and the terms do not mean limitation of the number ofcomponents.

Embodiment 1 <Circuit Configuration>

FIG. 1 illustrates an example of a configuration of a power sourcecircuit 101. The power source circuit 101 includes a voltage convertercircuit 102 and a control circuit 103 for the voltage converter circuit102. The control circuit 103 includes a voltage divider circuit 104 anda protective circuit 105.

A pulse width modulation signal VGS is input from the control circuit103 to the voltage converter circuit 102, specifically, from an outputterminal of a pulse width modulation output driver 123 of the controlcircuit 103 to a gate of a transistor 111 of the voltage convertercircuit 102, so that the voltage converter circuit 102 is controlled.

The voltage converter circuit 102 and the control circuit 103 areelectrically connected to an input terminal IN to which an input voltageVIN is input. The voltage converter circuit 102 is electricallyconnected to an output terminal OUT which outputs an output voltageVOUT. The voltage divider circuit 104 makes part of the output voltageVOUT to be fed back to the control circuit 103 as a feedback voltageVFB.

The voltage converter circuit 102 is a DC-DC converter including atransistor 111, a coil 112, a diode 113, and a capacitor 114.

A DC-DC converter is a circuit that converts a direct current voltage toanother direct current voltage. Typical conversion modes of a DC-DCconverter include a linear mode and a switching mode. A switching modeDC-DC converter has excellent conversion efficiency. In this embodiment,a switching mode DC-DC converter, particularly a chopper-type DC-DCconverter, including a transistor, a coil, a diode, and a capacitor isused as the voltage converter circuit 102.

The control circuit 103 includes the voltage divider circuit 104, theprotective circuit 105, a triangle-wave generation circuit 121, an erroramplifier circuit (also referred to as an error amplifier) 122, thepulse width modulation output driver 123, a bias generation circuit 131,a reference voltage generation circuit 132, a band gap reference 133,and a voltage regulator circuit 134.

The voltage divider circuit 104 includes a resistor 124 and a resistor125. The voltage divider circuit 104 divides the output voltage VOUToutput from the output terminal OUT in accordance with the resistancevalues of the resistor 124 and the resistor 125. The voltage dividercircuit 104 makes part of the output voltage VOUT to be output from thevoltage divider circuit 104 as the feedback voltage VFB and input to anon-inverting input terminal of the error amplifier circuit 122.

The protective circuit 105 includes an oxide semiconductor transistor151 in which a channel formation region is formed in an oxidesemiconductor film, an operational amplifier 152, an oxide semiconductortransistor 153, and a capacitor 154.

A voltage V1 is input to a gate of the oxide semiconductor transistor151. When the voltage V1 is a high-level potential (VH), the oxidesemiconductor transistor 151 is in a conducting state (also referred toas an on state). When the voltage V1 is a low-level potential (VL), theoxide semiconductor transistor 151 is in a non-conducting state (alsoreferred to as an off state). One of a source and a drain of the oxidesemiconductor transistor 151 is electrically connected to the inputterminal IN to which the input voltage VIN is input. The other of thesource and the drain of the oxide semiconductor transistor 151 iselectrically connected to an inverting input terminal of the operationalamplifier 152, one of a source and a drain of the oxide semiconductortransistor 153, and one terminal of the capacitor 154.

Note that a portion to which the other of the source and the drain ofthe oxide semiconductor transistor 151, the one of the source and thedrain of the oxide semiconductor transistor 153, the inverting inputterminal of the operational amplifier 152, and the one terminal of thecapacitor 154 are connected is a node M1.

The oxide semiconductor transistor 151 detects a leakage current(off-state current) in a non-conducting state (off state). The voltageV1 input to the gate of the oxide semiconductor transistor 151 ispreferably lower than or equal to 0 V, which brings the oxidesemiconductor transistor 151 completely in a non-conducting state.

The oxide semiconductor transistors 151 are each provided near anelement that generates heat such as a transistor 111 or a diode 113 ofthe voltage converter circuit 102 or an element included in a circuitthat generates heat such as a voltage regulator circuit 134, forexample. As the arrangement of the element that generates heat and theoxide semiconductor transistors 151, for example, a multi-finger layout,a common-centroid layout, or the like in which a plurality oftransistors are provided alternately may be used. The element thatgenerates heat and the oxide semiconductor transistors 151 may beprovided laterally (in the horizontal direction) to each other, so thatthey are close to each other. Alternatively, the element that generatesheat and the oxide semiconductor transistors 151 may be overlapped witheach other (in the vertical direction), so that these are close to eachother. Note that the arrangement of the element that generates heat andthe oxide semiconductor transistors 151 is described in detail later.

FIG. 3 shows a relation between temperature and an off-state current ofan oxide semiconductor transistor of this embodiment.

The oxide semiconductor transistor used for the graph in FIG. 3 has achannel length (length of a channel formation region) L of 3 μm, achannel width (width of the channel formation region) W of 10 cm, and alength (length of a portion of a source or drain region which does notoverlap with a gate electrode) L_(off) of 2 μm. Further, the value ofthe off-state current in FIG. 3 is the value per unit channel width (1μm) of an off-state current obtained from a measurement.

Note that FIG. 3 shows temperatures and off-state currents of threeoxide semiconductor transistors each of which has the above-describedchannel length L, channel width W, and length L_(off) that are measured(the measurement results of the three oxide semiconductor transistorsare indicated by a circle sign, a triangle sign, and a square sign). Astraight line in FIG. 3 shows a calculation result obtained from themeasurement results of the three oxide semiconductor transistors with anassumption that the off-state current changes linearly with respect totemperature.

As shown in FIG. 3, the off-state current of the oxide semiconductortransistor of this embodiment is larger, as the temperature is higher.Further, the off-state current changes linearly with respect to thetemperatures in the range of 85° C. or higher and 150° C. or lower. Byutilizing this, the temperature of an element that generates heat can bedetected by the oxide semiconductor transistor 151 and the operation ofthe element that generates heat is stopped. The operation of the elementthat generates heat is stopped, so that the temperature of the elementthat generates heat is prevented from exceeding an operating temperaturelimit.

The off-state current of the oxide semiconductor transistor of thisembodiment is extremely small even at a high temperature (e.g., about150° C.); the off-state current per channel length (1 μm) is 1×10⁻²⁰ A.Accordingly, the channel width W is widened, so that the off-statecurrent can be increased. Thus, the channel width W of the oxidesemiconductor transistor 151 is preferably longer than or equal to 1 m.

Table 1 shows a calculation result of a voltage V3 of the node M1 at thetime when the oxide semiconductor transistor 151 has a channel length Lof 3 μm and a channel width W of 1×10⁶ μm (1 m), the capacitor 154 has acapacitance of 1×10⁻¹⁰ F, and a period (period T) in which electriccharge accumulated in the capacitor 154 is refreshed is 5 seconds. Notethat the measurement result of FIG. 3 is used for the value of theoff-state current in Table 1. The details of the period T are describedlater.

TABLE 1 85° C. 150° C. voltage V3 (V) 2.00E−06 5.00E−04 channel length L(μm) 3 3 channel width W (μm) 1.00E+06 1.00E+06 off-state current (A)4.00E−23 1.00E−20 period T (S) 5 5 capacitance (F) 1.00E−10 1.00E−10

As shown in Table 1, when the channel width W is 1 m, a voltage valuesufficient for the voltage V3 can be obtained. Although the details ofthe operation of the power source circuit 101 are described later, thevoltage value sufficient for the voltage V3 is obtained, so that theoperational amplifier 152 can be operated, and then, a voltage V4 can beoutput from the operational amplifier 152. In this way, the temperatureof an element that generates heat and the temperature limit thereof canbe detected.

However, as the off-state current of the oxide semiconductor transistor151 is increased, the current consumption of the power source circuit101 is increased. Thus, the channel width W of the oxide semiconductortransistor 151 needs to be determined in consideration of a relationbetween current consumption and an off-state current needed fordetecting the temperature of an element that generates heat and thetemperature limit thereof.

Note that the off-state current of the oxide semiconductor transistor151 varies depending on, as well as the channel width W, the thicknessof a gate insulating film, the size, and the like of the oxidesemiconductor transistor 151. Thus, the thickness of a gate insulatingfilm, the size, and the like of the oxide semiconductor transistor 151need to be determined depending on the temperature to be detected.

The inverting input terminal of the operational amplifier 152 iselectrically connected to the other of the source and the drain of theoxide semiconductor transistor 151, the one of the source and the drainof the oxide semiconductor transistor 153, and the one terminal of thecapacitor 154. A first reference voltage VREF1 is input to anon-inverting input terminal of the operational amplifier 152. Theoutput voltage V4 is output from an output terminal of the operationalamplifier 152 to the outside.

Note that the output voltage V4 shifts in the positive direction whenvoltage input to the inverting input terminal of the operationalamplifier 152 exceeds the first reference voltage VREF1 input to thenon-inverting input terminal of the operational amplifier 152, which isdescribed in detail later. Accordingly, the operational amplifier 152can be regarded as a comparator.

The voltage V2 is input to a gate of the oxide semiconductor transistor153. When the voltage V2 is a high-level potential (VH), the oxidesemiconductor transistor 153 is in a conducting state. When the voltageV2 is a low-level potential (VL), the oxide semiconductor transistor 153is in a non-conducting state. The one of the source and the drain of theoxide semiconductor transistor 153 is electrically connected to theother of the source and the drain of the oxide semiconductor transistor151, the inverting input terminal of the operational amplifier 152, andthe one terminal of the capacitor 154. The low-level potential (VL),which is a reference voltage, is input to the other of the source andthe drain of the oxide semiconductor transistor 153. Note that a groundpotential GND is used as the low-level potential (VL), which is areference voltage, for example.

The oxide semiconductor transistor 153 makes electric charge accumulatedin the capacitor 154 to be refreshed every certain period (period T).When the voltage V2, which is the high-level potential (VH), is input tothe gate of the oxide semiconductor transistor 153, the oxidesemiconductor transistor 153 is in a conducting state. The low-levelpotential (VL), e.g., a ground potential GND, is input to the other ofthe source and the drain of the oxide semiconductor transistor 153, sothat the potential of the one of the source and the drain of the oxidesemiconductor transistor 153 is also a ground potential GND. The one ofthe source and the drain of the oxide semiconductor transistor 153 iselectrically connected to the one terminal of the capacitor 154; thus,the electric charge accumulated in the capacitor 154 is released.

When the channel width of the oxide semiconductor transistor 153 islonger than the channel width of the oxide semiconductor transistor 151,the off-state current of the oxide semiconductor transistor 153 exceedsthe off-state current of the oxide semiconductor transistor 151.

When the off-state current of the oxide semiconductor transistor 153exceeds the off-state current of the oxide semiconductor transistor 151,electric charge is not accumulated in the capacitor 154.

Thus, the channel width of the oxide semiconductor transistor 151 needsto be longer than the channel width of the oxide semiconductortransistor 153.

The one terminal of the capacitor 154 is electrically connected to theother of the source and the drain of the oxide semiconductor transistor151, the inverting input terminal of the operational amplifier 152, andthe one of the source and the drain of the oxide semiconductortransistor 153. The low-level potential (VL), which is a referencevoltage, is input to the other terminal of the capacitor 154. Note thatas the low-level potential (VL), which is a reference voltage, a groundpotential GND is used, for example.

The reference voltage generation circuit 132 generates a secondreference voltage VREF2.

The error amplifier circuit 122 integrates a difference between thesecond reference voltage VREF2 generated in the reference voltagegeneration circuit 132 and the feedback voltage VFB, and outputs asignal obtained by integrating the difference to the pulse widthmodulation output driver 123. The triangle-wave generation circuit 121generates a triangle wave using the second reference voltage VREF2 and areference current generated using the second reference voltage VREF2,and outputs the triangle wave to the pulse width modulation outputdriver 123.

The pulse width modulation output driver 123 compares the output fromthe error amplifier circuit 122 with the triangle wave from thetriangle-wave generation circuit 121, and outputs a pulse widthmodulation signal VGS to the transistor 111.

The bias generation circuit 131 is a circuit by which a bias voltage ora bias current is applied. Application of the bias voltage or the biascurrent can make current always flow in one direction.

The band gap reference 133 generates a reference voltage utilizing bandgap energy of silicon.

The voltage regulator circuit 134 adjusts an output voltage to beconstant.

The operation of the protective circuit 105 is described below.

<Operation>

When an element provided near the protective circuit 105 generates heat,the temperature of the oxide semiconductor transistor 151 is increased.As described above, the off-state current of the oxide semiconductortransistor 151 is increased, as the temperature is higher. The increasedoff-state current of the oxide semiconductor transistor 151 isaccumulated in the capacitor 154 as electric charge. When the electriccharge is accumulated in the capacitor 154 during the period T, thevoltage V3 of the node M1 is increased. When the voltage V3 of the nodeM1 is increased and the voltage V3 exceeds the first reference voltageVREF1 that is input to the non-inverting input terminal of theoperational amplifier 152, the output voltage V4 of the operationalamplifier 152 shifts in the positive direction. In this way, it can bedetected that the temperature of the element provided near theprotective circuit 105 reaches a predetermined temperature.

When the voltage V3 of the node M1 does not exceed the first referencevoltage VREF1 that is input to the non-inverting input terminal of theoperational amplifier 152 during the period T, the output voltage V4 ofthe operational amplifier 152 is not shifted.

When the output voltage V4 of the operational amplifier 152 isintermittently shifted every period T, the operation of an element thatgenerates heat or the power source circuit 101 is stopped in order toprotect the control circuit 103.

The length of the period T is changed depending on the off-state currentof the oxide semiconductor transistor 151, the capacitance of thecapacitor 154, and the voltage value of the voltage V3 of the node M1,and is preferably one second or longer and ten seconds or shorter.

<Another Example of Circuit Configuration>

FIG. 2 illustrates an example of a configuration of a power sourcecircuit, which is different from the one in FIG. 1. In the power sourcecircuit 101 illustrated in FIG. 2, an operational amplifier 155 isprovided between the operational amplifier 152 and the one of the sourceand the drain of the oxide semiconductor transistor 153.

An inverting input terminal of the operational amplifier 155 iselectrically connected to the other of the source and the drain of theoxide semiconductor transistor 151, the one of the source and the drainof the oxide semiconductor transistor 153, and the one terminal of thecapacitor 154. A third reference voltage VREF3 is input to anon-inverting input terminal of the operational amplifier 155. Theoutput terminal of the operational amplifier 155 is electricallyconnected to the inverting input terminal of the operational amplifier152.

Note that a portion to which the other of the source and the drain ofthe oxide semiconductor transistor 151, the one of the source and thedrain of the oxide semiconductor transistor 153, the one terminal of thecapacitor 154, and the inverting input terminal of the operationalamplifier 155 are connected is a node M2. The voltage of the node M2 isthe voltage V3, which is same as the node M1. The operational amplifier155 amplifies the voltage V3 and outputs it to the operational amplifier152.

As described above, this embodiment can provide a protective circuit toprevent a power source circuit and an electric device from being brokenbecause of heat.

<Oxide Semiconductor Transistor>

An oxide semiconductor transistor according to this embodiment isdescribed below.

An oxide semiconductor transistor 901 illustrated in FIG. 4A includes anoxide semiconductor layer 903 that is formed over an insulating film 902and functions as an active layer; a source electrode 904 and a drainelectrode 905 formed over the oxide semiconductor layer 903; a gateinsulating film 906 over the oxide semiconductor layer 903, the sourceelectrode 904, and the drain electrode 905; and a gate electrode 907that is provided over the gate insulating film 906 and overlaps with theoxide semiconductor layer 903.

The oxide semiconductor transistor 901 illustrated in FIG. 4A is of atop-gate type where the gate electrode 907 is formed over the oxidesemiconductor layer 903, and is also of a top-contact type where thesource electrode 904 and the drain electrode 905 are formed over theoxide semiconductor layer 903. In the oxide semiconductor transistor901, the source electrode 904 and the drain electrode 905 do not overlapwith the gate electrode 907. That is, the distance between the gateelectrode 907 and each of the source electrode 904 and the drainelectrode 905 is larger than the thickness of the gate insulating film906. Therefore, in the oxide semiconductor transistor 901, the parasiticcapacitance generated between the gate electrode 907 and each of thesource electrode 904 and the drain electrode 905 can be small, so thatthe oxide semiconductor transistor 901 can operate at high speed.

The oxide semiconductor layer 903 includes a pair of high-concentrationregions 908 that are obtained by addition of dopant imparting n-typeconductivity to the oxide semiconductor layer 903 after formation of thegate electrode 907. Further, the oxide semiconductor layer 903 includesa channel formation region 909 that overlaps with the gate electrode 907with the gate insulating film 906 interposed therebetween. In the oxidesemiconductor layer 903, the channel formation region 909 is providedbetween the pair of high-concentration regions 908. The addition ofdopant for forming the high-concentration regions 908 can be performedby an ion implantation method. As the dopant, for example, a rare gassuch as helium, argon, or xenon, a Group 15 element such as nitrogen,phosphorus, arsenic, or antimony, or the like can be used.

For example, in the case where nitrogen is used as the dopant, theconcentration of nitrogen atoms in the high-concentration regions 908 ispreferably higher than or equal to 5×10¹⁹/cm³ and lower than or equal to1×10²²/cm³.

The high-concentration regions 908 to which the dopant imparting n-typeconductivity is added have higher conductivity than the other regions inthe oxide semiconductor layer 903. Therefore, with provision of thehigh-concentration regions 908 in the oxide semiconductor layer 903, theresistance between the source electrode 904 and the drain electrode 905can be decreased.

The oxide semiconductor layer 903 may include a c-axis alignedcrystalline oxide semiconductor (CAAC-OS). In the case where the oxidesemiconductor layer 903 includes the CAAC-OS, the conductivity of theoxide semiconductor layer 903 can be increased as compared to the caseof an amorphous semiconductor; thus, the resistance between the sourceelectrode 904 and the drain electrode 905 can be decreased. The CAAC-OSis described later.

By decreasing the resistance between the source electrode 904 and thedrain electrode 905, a large on-state current and high-speed operationcan be ensured even when the oxide semiconductor transistor 901 isminiaturized. With the miniaturization of the oxide semiconductortransistor 901, the area occupied by the storage element including thetransistor can be reduced and the storage capacity per unit area can beincreased.

The oxide semiconductor transistor 901 illustrated in FIG. 4A mayinclude a sidewall formed using an insulating film at a side portion ofthe gate electrode 907. A low-concentration region may be formed withthe use of the sidewall between the channel formation region 909 and thehigh-concentration region 908. With provision of the low-concentrationregion, a negative shift in the threshold voltage due to a short-channeleffect can be reduced.

The oxide semiconductor transistor 901 can be used as one or both of theoxide semiconductor transistor 151 and the oxide semiconductortransistor 153. Further, each of the operational amplifier 152 and theoperational amplifier 155 may include the oxide semiconductor transistor901.

Further, the oxide semiconductor transistor 901 can also be used as atransistor or the diode 113 in the voltage converter circuit 102. Whenthe diode 113 is formed using the oxide semiconductor transistor 901, agate of the oxide semiconductor transistor 901 may be connected to oneof a source and a drain thereof (diode-connection).

Further, each of the triangle-wave generation circuit 121, the erroramplifier circuit 122, the pulse width modulation output driver 123, thebias generation circuit 131, the reference voltage generation circuit132, the band gap reference 133, and the voltage regulator circuit 134in the control circuit 103 can include the oxide semiconductortransistor 901.

An oxide semiconductor transistor 911 illustrated in FIG. 4B includes asource electrode 914 and a drain electrode 915 formed over an insulatingfilm 912; an oxide semiconductor layer 913 that is formed over thesource electrode 914 and the drain electrode 915 and functions as anactive layer; a gate insulating film 916 over the oxide semiconductorlayer 913, the source electrode 914, and the drain electrode 915; and agate electrode 917 that is provided over the gate insulating film 916and overlaps with the oxide semiconductor layer 913.

The oxide semiconductor transistor 911 illustrated in FIG. 4B is of atop-gate type where the gate electrode 917 is formed over the oxidesemiconductor layer 913, and is also of a bottom-contact type where thesource electrode 914 and the drain electrode 915 are formed below theoxide semiconductor layer 913. In the oxide semiconductor transistor911, the source electrode 914 and the drain electrode 915 do not overlapwith the gate electrode 917 as in the oxide semiconductor transistor901; thus, the parasitic capacitance generated between the gateelectrode 917 and each of the source electrode 914 and the drainelectrode 915 can be small, so that the oxide semiconductor transistor911 can operate at high speed.

The oxide semiconductor layer 913 includes a pair of high-concentrationregions 918 that are obtained by addition of dopant imparting n-typeconductivity to the oxide semiconductor layer 913 after formation of thegate electrode 917. Further, the oxide semiconductor layer 913 includesa channel formation region 919 that overlaps with the gate electrode 917with the gate insulating film 916 interposed therebetween. In the oxidesemiconductor layer 913, the channel formation region 919 is providedbetween the pair of high-concentration regions 918.

Like the above-described high-concentration regions 908 included in theoxide semiconductor transistor 901, the high-concentration regions 918can be formed by an ion implantation method. The kind of dopant in thecase of the high-concentration regions 908 can be referred to for thekind of dopant for forming the high-concentration regions 918.

For example, in the case where nitrogen is used as the dopant, theconcentration of nitrogen atoms in the high-concentration regions 918 ispreferably higher than or equal to 5×10¹⁹/cm³ and lower than or equal to1×10²²/cm³.

The high-concentration regions 918 to which the dopant imparting n-typeconductivity is added have higher conductivity than the other regions inthe oxide semiconductor layer 913. Therefore, by providing thehigh-concentration regions 918 in the oxide semiconductor layer 913, theresistance between the source electrode 914 and the drain electrode 915can be decreased.

The oxide semiconductor layer 913 may include a CAAC-OS. In the casewhere the oxide semiconductor layer 913 includes a CAAC-OS, theconductivity of the oxide semiconductor layer 913 can be increased ascompared to the case of an amorphous semiconductor; thus, the resistancebetween the source electrode 914 and the drain electrode 915 can bedecreased.

By decreasing the resistance between the source electrode 914 and thedrain electrode 915, a large on-state current and high-speed operationcan be ensured even when the oxide semiconductor transistor 911 isminiaturized.

The oxide semiconductor transistor 911 illustrated in FIG. 4B mayinclude a sidewall formed using an insulating film at a side portion ofthe gate electrode 917. A low-concentration region may be formed withthe use of the sidewall between the channel formation region 919 and thehigh-concentration region 918. With provision of the low-concentrationregion, a negative shift in the threshold voltage due to a short-channeleffect can be reduced.

The oxide semiconductor transistor 911 can be used as one or both of theoxide semiconductor transistor 151 and the oxide semiconductortransistor 153. Further, each of the operational amplifier 152 and theoperational amplifier 155 may include the oxide semiconductor transistor911.

Further, the oxide semiconductor transistor 911 can also be used as atransistor or the diode 113 in the voltage converter circuit 102. Whenthe diode 113 is formed using the oxide semiconductor transistor 911, agate of the oxide semiconductor transistor 911 may be connected to oneof a source and a drain thereof (diode-connection).

Further, each of the triangle-wave generation circuit 121, the erroramplifier circuit 122, the pulse width modulation output driver 123, thebias generation circuit 131, the reference voltage generation circuit132, the band gap reference 133, and the voltage regulator circuit 134in the control circuit 103 can include the oxide semiconductortransistor 911.

FIGS. 5A and 5B illustrate an example of the arrangement of an elementthat generates heat and the oxide semiconductor transistor 151.

FIGS. 5A and 5B illustrate a top view of a multi-finger layout and a topview of a common-centroid layout, respectively; each of the arrangementsincludes oxide semiconductor transistors 161 each of which serves as anelement that generates heat or an element included in a circuit thatgenerates heat and the oxide semiconductor transistors 151.

Note that in FIGS. 5A and 5B, an oxide semiconductor transistor 162 isused as each of the oxide semiconductor transistors 151 (an oxidesemiconductor transistor 151_1 and an oxide semiconductor transistor151_2) and the oxide semiconductor transistors 161 (an oxidesemiconductor transistor 161_1 and an oxide semiconductor transistor161_2). The oxide semiconductor transistor 162 includes an oxidesemiconductor film 144, electrodes 142 a and 142 b which serve as sourceand drain electrodes, and a gate electrode 148.

FIG. 5A illustrates an example of a multi-finger layout of the oxidesemiconductor transistors 151 and the oxide semiconductor transistors161.

The oxide semiconductor transistors 151 and the oxide semiconductortransistors 161 are provided alternately in FIG. 5A. When the oxidesemiconductor transistors 151 and the oxide semiconductor transistors161 are provided alternately, the oxide semiconductor transistors 161generate heat, the temperature of the oxide semiconductor transistors161 is increased, and the temperature of the oxide semiconductortransistors 151 is also increased. Accordingly, the off-state current ofthe oxide semiconductor transistors 151 is increased. As describedabove, the off-state of the oxide semiconductor transistors 151 isincreased, so that the temperature of the oxide semiconductortransistors 161 and the temperature limit thereof can be detected.

In FIG. 5A, the gate electrode 148 of the oxide semiconductor transistor151_1 and the gate electrode 148 of the oxide semiconductor transistor151_2 are electrically connected to each other via a wiring 164. Theelectrode 142 a serving as one of source and drain electrodes of theoxide semiconductor transistor 151_1 and the electrode 142 a serving asone of source and drain electrodes of the oxide semiconductor transistor151_2 are electrically connected to each other via a wiring 168. Theelectrode 142 b serving as the other of the source and drain electrodesof the oxide semiconductor transistor 151_1 and the electrode 142 bserving as the other of source and drain electrodes of the oxidesemiconductor transistor 151_2 are electrically connected to each othervia a wiring 167.

The gate electrode 148 of the oxide semiconductor transistor 161_1 andthe gate electrode 148 of the oxide semiconductor transistor 161_2 areelectrically connected to each other via a wiring 163. The electrode 142a serving as one of source and drain electrodes of the oxidesemiconductor transistor 161_1 and the electrode 142 a serving as one ofsource and drain electrodes of the oxide semiconductor transistor 161_2are electrically connected to each other via a wiring 166. The electrode142 b serving as the other of source and drain electrodes of the oxidesemiconductor transistor 161_1 and the electrode 142 b serving as theother of source and drain electrodes of the oxide semiconductortransistor 161_2 are electrically connected to each other via a wiring165.

FIG. 5B illustrates an example of a common-centroid layout of the oxidesemiconductor transistors 151 and the oxide semiconductor transistors161. Note that in FIG. 5B, the oxide semiconductor transistors 151 areindicated by dashed-dotted line, and the oxide semiconductor transistors161 are indicated by a dotted line.

In FIG. 5B, the oxide semiconductor transistors 151 and the oxidesemiconductor transistors 161 are provided alternately. With such astructure, the oxide semiconductor transistors 161 generate heat and thetemperature of the oxide semiconductor transistors 161 is increased, andthe temperature of the oxide semiconductor transistors 151 is alsoincreased. Accordingly, the off-state current of the oxide semiconductortransistors 151 is increased. As described above, the off-state currentof the oxide semiconductor transistors 151 is increased, so that thetemperature of the oxide semiconductor transistors 161 and thetemperature limit thereof can be detected.

In FIG. 5B, the gate electrode 148 of the oxide semiconductor transistor151_1 and the oxide semiconductor transistor 161_2 is formed using aconductive film. Further, the gate electrode 148 of the oxidesemiconductor transistor 151_2 and the oxide semiconductor transistor161_1 is formed using a conductive film.

The gate electrode 148 of the oxide semiconductor transistor 151_1 andthe oxide semiconductor transistor 161_2 is electrically connected tothe gate electrode 148 of the oxide semiconductor transistor 151_2 andthe oxide semiconductor transistor 161_1 via a wiring 171.

The electrode 142 a serving as the one of the source and drainelectrodes of the oxide semiconductor transistor 151_1 and the electrode142 a serving as the one of the source and drain electrodes of the oxidesemiconductor transistor 151_2 are electrically connected to each othervia a wiring 173. The electrode 142 a serving as the one of the sourceand drain electrodes of the oxide semiconductor transistor 161_1 and theone of the source and drain electrodes of the oxide semiconductortransistor 161_2 is formed using a conductive film.

The electrode 142 b serving as the other of the source and drainelectrodes of the oxide semiconductor transistor 151_1, oxidesemiconductor transistor 151_2, the oxide semiconductor transistor161_1, or the oxide semiconductor transistor 161_2 is formed using aconductive film. Further, the electrode 142 b is electrically connectedto a wiring 172.

FIG. 6 illustrates another example of the arrangement of an element thatgenerates heat and the oxide semiconductor transistor 151.

A cross-sectional view in FIG. 6 illustrates the case in which the oxidesemiconductor transistors 151 overlaps with a transistor that is formedusing a semiconductor substrate and serves as the element that generatesheat or the element included in a circuit that generates heat, so thatthese are close to each other.

In FIG. 6, the oxide semiconductor transistor 151 is formed over atransistor 211 formed using a semiconductor substrate 200. Note thateither one or both of a p-channel transistor and an n-channel transistormay be provided over the semiconductor substrate 200.

A p-channel transistor and an n-channel transistor each of which isformed using the semiconductor substrate 200 may be formed by a generalmethod. After a p-channel transistor and an n-channel transistor areformed using the semiconductor substrate 200, the oxide semiconductortransistor 151 is formed thereover.

Note that the semiconductor substrate 200 for which the p-channeltransistor and the n-channel transistor are provided includes ahigh-concentration impurity region 201 functioning as a source region ora drain region, a low-concentration impurity region 202. Further, thep-channel transistor and the n-channel transistor include a gateinsulating film 203, a gate electrode 204, and an interlayer insulatingfilm 205.

An oxide semiconductor transistor 151 includes an oxide semiconductorfilm 181 provided over the semiconductor substrate 200 for which thep-channel transistor and the n-channel transistor are provided,electrodes 182 a and 182 b serving as a source electrode and a drainelectrode which are in contact with the oxide semiconductor film 181 andprovided apart from each other, a gate insulating film 183 provided overat least a channel formation region in the oxide semiconductor film 181,and a gate electrode 184 which overlaps with the oxide semiconductorfilm 181 and is provided over the gate insulating film 183.

The interlayer insulating film 205 also functions as a base insulatingfilm of the oxide semiconductor film 181.

In this embodiment, as described above, an example in which theprotective circuit 105 is used as the voltage converter circuit 102 thatis a DC-DC converter is described; however, the present invention is notlimited thereto. The protective circuit 105 in this embodiment can beused for a power source circuit including other circuits that generatelarge heat such as an AC-DC converter.

A plurality of protective circuits 105 may be arranged in matrix for anelement that generates heat or a circuit that generates heat. When theplurality of protective circuits 105 are arranged in matrix, theplurality of protective circuits 105 serve as temperature sensors formeasuring temperature distribution for the element that generates heator the circuit that generates heat. With such a structure, a temperaturesensor can be obtained.

Embodiment 2

In this embodiment, an oxide semiconductor transistor that is used forone embodiment of the disclosed invention is described in detail. Notethat the oxide semiconductor transistor in this embodiment can be usedas the oxide semiconductor transistor described in Embodiment 1.

An oxide semiconductor to be used for an oxide semiconductor transistorof this embodiment preferably contains at least indium (In) or zinc(Zn). It is particularly preferable that the oxide semiconductor containIn and Zn. As a stabilizer for reducing variation in electricalcharacteristics of a transistor including the oxide semiconductor,gallium (Ga) is preferably additionally contained. Tin (Sn) ispreferably contained as a stabilizer. Hafnium (Hf) is preferablycontained as a stabilizer. Aluminum (Al) is preferably contained as astabilizer.

As another stabilizer, one or plural kinds of lanthanoid such aslanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium(Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy),holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), or lutetium(Lu) may be contained.

As the oxide semiconductor, for example, any of the following can beused: indium oxide; tin oxide; zinc oxide; a two-component metal oxidesuch as an In—Zn-based oxide, a Sn—Zn-based oxide, an Al—Zn-based oxide,a Zn—Mg-based oxide, a Sn—Mg-based oxide, an In—Mg-based oxide, or anIn—Ga-based oxide; a three-component metal oxide such as anIn—Ga—Zn-based oxide (also referred to as IGZO), an In—Al—Zn-basedoxide, an In—Sn—Zn-based oxide, a Sn—Ga—Zn-based oxide, anAl—Ga—Zn-based oxide, a Sn—Al—Zn-based oxide, an In—Hf—Zn-based oxide,an In—La—Zn-based oxide, an In—Ce—Zn-based oxide, an In—Pr—Zn-basedoxide, an In—Nd—Zn-based oxide, an In—Sm—Zn-based oxide, anIn—Eu—Zn-based oxide, an In—Gd—Zn-based oxide, an In—Tb—Zn-based oxide,an In—Dy—Zn-based oxide, an In—Ho—Zn-based oxide, an In—Er—Zn-basedoxide, an In—Tm—Zn-based oxide, an In—Yb—Zn-based oxide, or anIn—Lu—Zn-based oxide; a four-component metal oxide such as anIn—Sn—Ga—Zn-based oxide, an In—Hf—Ga—Zn-based oxide, anIn—Al—Ga—Zn-based oxide, an In—Sn—Al—Zn-based oxide, anIn—Sn—Hf—Zn-based oxide, or an In—Hf—Al—Zn-based oxide.

Here, for example, an In—Ga—Zn-based oxide means an oxide containing In,Ga, and Zn as its main component, and there is no particular limitationon the ratio of In, Ga, and Zn. Further, the In—Ga—Zn-based oxide maycontain a metal element other than In, Ga, and Zn.

As the oxide semiconductor, a material expressed by a chemical formulaInMO_(3(ZnO)) _(m) (m>0 and m is not an integer) may be used. Note thatM represents one or more metal elements selected from Ga, Fe, Mn, andCo. As the oxide semiconductor, a material expressed by In₃SnO₅(ZnO)_(n)(n>0 and n is an integer) may also be used.

For example, an In—Ga—Zn-based oxide with an atomic ratio ofIn:Ga:Zn=1:1:1 (=1/3:1/3:1/3) or In:Ga:Zn=2:2:1 (=2/5:2/5:1/5), or anyof oxides whose composition is in the neighborhood of the abovecompositions can be used. Alternatively, an In—Sn—Zn-based oxide with anatomic ratio of In: Sn: Zn=1:1:1 (=1/3:1/3:1/3), In:Sn:Zn=2:1:3(=1/3:1/6:1/2), or In:Sn:Zn=2:1:5 (=1/4:1/8:5/8), or any of oxides whosecomposition is in the neighborhood of the above compositions may beused.

However, the present invention is not limited to the above compositions,and an oxide having an appropriate composition may be used depending onnecessary semiconductor characteristics (e.g., mobility, a thresholdvoltage, or variation). In order to obtain necessary semiconductorcharacteristics, it is preferable that the carrier density, the impurityconcentration, the defect density, the atomic ratio of a metal elementto oxygen, the interatomic distance, the density, and the like of theoxide semiconductor be set to be appropriate.

For example, with an In—Sn—Zn-based oxide, high mobility can be obtainedwith relative ease. However, mobility can be increased by reducing thedefect density in a bulk also in the case of using the In—Ga—Zn-basedoxide.

Note that for example, the expression “the composition of an oxidecontaining In, Ga, and Zn at the atomic ratio, In:Ga:Zn=a:b:c (a+b+c=1), is in the neighborhood of the composition of an oxide containingIn, Ga, and Zn at the atomic ratio, In:Ga:Zn=A:B:C (A+B+C=1)” means thata, b, and c satisfy the following relation: (a−A)²+(b−B)²+(c−C)²≦r², andr may be 0.05, for example. The same applies to other oxides.

The oxide semiconductor may be either single crystal ornon-single-crystal. In the latter case, the oxide semiconductor may beeither amorphous or polycrystal. Further, the oxide semiconductor mayhave either an amorphous structure including a crystalline portion or anon-amorphous structure.

In the case of an oxide semiconductor in an amorphous state, a flatsurface can be obtained with relative ease, so that when a transistor ismanufactured with the use of such an oxide semiconductor, interfacescattering can be reduced, and relatively high mobility can be obtainedwith relative ease.

In an oxide semiconductor having crystallinity, defects in the bulk canbe further reduced and when surface flatness is improved, mobilityhigher than that of an oxide semiconductor in an amorphous state can beobtained. In order to improve the surface flatness, the oxidesemiconductor is preferably formed over a flat surface. Specifically,the oxide semiconductor may be formed over a surface with an averagesurface roughness (R_(a)) of less than or equal to 1 nm, preferably lessthan or equal to 0.3 nm, further preferably less than or equal to 0.1nm.

Note that the average surface roughness (R_(a)) is obtained byexpanding, into three dimensions, centerline average roughness that isdefined by JIS B 0601 to be able to apply it to a surface. R_(a) can beexpressed as an “average value of the absolute values of deviations froma reference surface to a designated surface” and is defined by thefollowing formula.

$\begin{matrix}{{Ra} = {\frac{1}{S_{0}}{\int_{y_{1}}^{y_{2}}{\int_{x_{1}}^{x_{2}}{{{{f\left( {x,y} \right)} - Z_{0}}}{x}{y}}}}}} & \left\lbrack {{FORMULA}\mspace{14mu} 1} \right\rbrack\end{matrix}$

In the above formula, S₀ represents the area of a plane to be measured(a rectangular region that is defined by four points represented bycoordinates (x₁, y₁), (x₁, y₂), (x₂, y₁), and (x₂, y₂)), and Z₀represents an average height of the plane to be measured. R_(a) can bemeasured using an atomic force microscope (AFM).

When an oxide semiconductor film of one embodiment of the disclosedinvention has crystallinity, the above-described CAAC-OS may be used. ACAAC-OS is described hereinbelow.

In this embodiment, an oxide semiconductor including a crystal withc-axis alignment, which has a triangular or hexagonal atomic arrangementwhen seen from the direction of an a-b plane, a surface, or an interfaceis described. In the crystal, metal atoms are arranged in a layeredmanner, or metal atoms and oxygen atoms are arranged in a layered manneralong the c-axis, and the direction of the a-axis or the b-axis isvaried in the a-b plane (the crystal rotates around the c-axis). Such anoxide semiconductor is also referred to as a c-axis aligned crystallineoxide semiconductor (CAAC-OS).

In a broad sense, a CAAC-OS means a non-single-crystal oxidesemiconductor including a phase which has a triangular, hexagonal,regular triangular, or regular hexagonal atomic arrangement when seenfrom the direction perpendicular to the a-b plane and in which metalatoms are arranged in a layered manner or metal atoms and oxygen atomsare arranged in a layered manner when seen from the directionperpendicular to the c-axis direction.

The CAAC-OS is not a single crystal oxide semiconductor, but this doesnot mean that the CAAC-OS is composed of only an amorphous component.Although the CAAC-OS includes a crystallized portion (crystallineportion), a boundary between one crystalline portion and anothercrystalline portion is not clear in some cases.

Nitrogen may be substituted for part of oxygen included in the CAAC-OS.The c-axes of individual crystalline portions included in the CAAC-OSmay be aligned in one direction (e.g., a direction perpendicular to asurface of a substrate over which the CAAC-OS is formed or a surface ofthe CAAC-OS). Alternatively, the normals of the a-b planes of theindividual crystalline portions included in the CAAC-OS may be alignedin one direction (e.g., a direction perpendicular to a surface of asubstrate over which the CAAC-OS is formed or a surface of the CAAC-OS).

The CAAC-OS becomes a conductor, a semiconductor, or an insulatordepending on its composition or the like. The CAAC-OS transmits or doesnot transmit visible light depending on its composition or the like.

As an example of such a CAAC-OS, there is an oxide semiconductor that isformed into a film shape and has a triangular or hexagonal atomicarrangement when observed from the direction perpendicular to a surfaceof the film or a surface of a substrate over which the oxidesemiconductor is formed, and in which metal atoms are arranged in alayered manner or metal atoms and oxygen atoms (or nitrogen atoms) arearranged in a layered manner when a cross section of the film isobserved.

An example of a crystal structure of the CAAC-OS is described in detailwith reference to FIGS. 7A to 7E, FIGS. 8A to 8C, and FIGS. 9A to 9C. InFIGS. 7A to 7E, FIGS. 8A to 8C, and FIGS. 9A to 9C, the verticaldirection corresponds to the c-axis direction and a plane perpendicularto the c-axis direction corresponds to the a-b plane, unless otherwisespecified. When the expressions “an upper half” and “a lower half” aresimply used, they refer to an upper half above the a-b plane and a lowerhalf below the a-b plane (an upper half and a lower half with respect tothe a-b plane). Furthermore, in FIGS. 7A to 7E, O surrounded by a circlerepresents tetracoordinate O and O surrounded by a double circlerepresents tricoordinate O.

FIG. 7A illustrates a structure including one hexacoordinate In atom andsix tetracoordinate oxygen (hereinafter referred to as tetracoordinateO) atoms proximate to the In atom. Here, a structure including one metalatom and oxygen atoms proximate thereto is referred to as a small group.The structure in FIG. 7A is actually an octahedral structure, but isillustrated as a planar structure for simplicity. Note that threetetracoordinate O atoms exist in each of an upper half and a lower halfin FIG. 7A. In the small group illustrated in FIG. 7A, electric chargeis O.

FIG. 7B illustrates a structure including one pentacoordinate Ga atom,three tricoordinate oxygen (hereinafter referred to as tricoordinate O)atoms proximate to the Ga atom, and two tetracoordinate O atomsproximate to the Ga atom. All the tricoordinate O atoms exist on the a-bplane. One tetracoordinate O atom exists in each of an upper half and alower half in FIG. 7B. An In atom can also have the structureillustrated in FIG. 7B because an In atom can have five ligands. In thesmall group illustrated in FIG. 7B, electric charge is O.

FIG. 7C illustrates a structure including one tetracoordinate Zn atomand four tetracoordinate O atoms proximate to the Zn atom. In FIG. 7C,one tetracoordinate O atom exists in an upper half and threetetracoordinate O atoms exist in a lower half In the small groupillustrated in FIG. 7C, electric charge is 0.

FIG. 7D illustrates a structure including one hexacoordinate Sn atom andsix tetracoordinate O atoms proximate to the Sn atom. In FIG. 7D, threetetracoordinate O atoms exist in each of an upper half and a lower halfIn the small group illustrated in FIG. 7D, electric charge is +1.

FIG. 7E illustrates a small group including two Zn atoms. In FIG. 7E,one tetracoordinate O atom exists in each of an upper half and a lowerhalf In the small group illustrated in FIG. 7E, electric charge is −1.

Here, a plurality of small groups form a medium group, and a pluralityof medium groups form a large group (also referred to as a unit cell).

Now, a rule of bonding between the small groups is described. The threeO atoms in the upper half with respect to the In atom have threeproximate In atoms in the downward direction, and the three O atoms inthe lower half have three proximate In atoms in the upward direction.The one O atom in the upper half with respect to the Ga atom has oneproximate Ga atom in the downward direction, and the one O atom in thelower half has one proximate Ga atom in the upward direction. The one Oatom in the upper half with respect to the Zn atom has one proximate Znatom in the downward direction, and the three O atoms in the lower halfhave three proximate Zn atoms in the upward direction. In this manner,the number of the tetracoordinate O atoms above the metal atom is equalto the number of the metal atoms proximate to and below each of thetetracoordinate O atoms. Similarly, the number of the tetracoordinate Oatoms below the metal atom is equal to the number of the metal atomsproximate to and above each of the tetracoordinate O atoms. Since thecoordination number of the tetracoordinate O atom is 4, the sum of thenumber of the metal atoms proximate to and below the O atom and thenumber of the metal atoms proximate to and above the O atom is 4.Accordingly, when the sum of the number of tetracoordinate O atoms abovea metal atom and the number of tetracoordinate O atoms below anothermetal atom is 4, the two kinds of small groups including the metal atomscan be bonded. For example, in the case where the hexacoordinate metal(In or Sn) atom is bonded through three tetracoordinate O atoms in theupper half, it is bonded to the pentacoordinate metal (Ga or In) atom orthe tetracoordinate metal (Zn) atom.

A metal atom whose coordination number is 4, 5, or 6 is bonded toanother metal atom through a tetracoordinate O atom in the c-axisdirection. In addition to the above, a medium group can be formed in adifferent manner by combining a plurality of small groups so that thetotal electric charge of the layered structure is 0.

FIG. 8A illustrates a model of a medium group included in a layeredstructure of an In—Sn—Zn—O-based material. FIG. 8B illustrates a largegroup including three medium groups. Note that FIG. 8C illustrates anatomic arrangement in the case where the layered structure in FIG. 8B isobserved from the c-axis direction.

In FIG. 8A, a tricoordinate O atom is omitted for simplicity, and atetracoordinate O atom is illustrated by a circle; the number in thecircle shows the number of tetracoordinate O atoms. For example, threetetracoordinate O atoms existing in each of an upper half and a lowerhalf with respect to a Sn atom are denoted by circled 3. Similarly, inFIG. 8A, one tetracoordinate O atom existing in each of an upper halfand a lower half with respect to an In atom is denoted by circled 1.FIG. 8A also illustrates a Zn atom proximate to one tetracoordinate Oatom in a lower half and three tetracoordinate O atoms in an upper half,and a Zn atom proximate to one tetracoordinate O atom in an upper halfand three tetracoordinate O atoms in a lower half

In the medium group included in the layered structure of theIn—Sn—Zn—O-based material in FIG. 8A, in the order starting from thetop, a Sn atom proximate to three tetracoordinate O atoms in each of anupper half and a lower half is bonded to an In atom proximate to onetetracoordinate O atom in each of an upper half and a lower half, the Inatom is bonded to a Zn atom proximate to three tetracoordinate O atomsin an upper half, the Zn atom is bonded to an In atom proximate to threetetracoordinate O atoms in each of an upper half and a lower halfthrough one tetracoordinate O atom in a lower half with respect to theZn atom, the In atom is bonded to a small group that includes two Znatoms and is proximate to one tetracoordinate O atom in an upper half,and the small group is bonded to a Sn atom proximate to threetetracoordinate O atoms in each of an upper half and a lower halfthrough one tetracoordinate O atom in a lower half with respect to thesmall group. A plurality of such medium groups are bonded, so that alarge group is formed.

Here, electric charge for one bond of a tricoordinate O atom andelectric charge for one bond of a tetracoordinate O atom can be assumedto be −0.667 and −0.5, respectively. For example, electric charge of a(hexacoordinate or pentacoordinate) In atom, electric charge of a(tetracoordinate) Zn atom, and electric charge of a (pentacoordinate orhexacoordinate) Sn atom are +3, +2, and +4, respectively. Accordingly,electric charge in a small group including a Sn atom is +1. Therefore,electric charge of −1, which cancels +1, is needed to form a layeredstructure including a Sn atom. As a structure having electric charge of−1, the small group including two Zn atoms as illustrated in FIG. 7E canbe given. For example, with one small group including two Zn atoms,electric charge of one small group including a Sn atom can be cancelled,so that the total electric charge of the layered structure can be 0.

Specifically, when the large group illustrated in FIG. 8B is repeated,an In—Sn—Zn—O-based crystal (In₂SnZn₃O₈) can be obtained. Note that alayered structure of the obtained In—Sn—Zn—O-based crystal can beexpressed as a composition formula, In₂SnZn₂O_(7(ZnO)) _(m) (m is 0 or anatural number).

The above-described rule also applies to the following oxides: afour-component metal oxide such as an In—Sn—Ga—Zn-based oxide; athree-component metal oxide such as an In—Ga—Zn-based oxide (alsoreferred to as IGZO), an In—Al—Zn-based oxide, a Sn—Ga—Zn-based oxide,an Al—Ga—Zn-based oxide, a Sn—Al—Zn-based oxide, an In—Hf—Zn-basedoxide, an In—La—Zn-based oxide, an In—Ce—Zn-based oxide, anIn—Pr—Zn-based oxide, an In—Nd—Zn-based oxide, an In—Sm—Zn-based oxide,an In—Eu—Zn-based oxide, an In—Gd—Zn-based oxide, an In—Tb—Zn-basedoxide, an In—Dy—Zn-based oxide, an In—Ho—Zn-based oxide, anIn—Er—Zn-based oxide, an In—Tm—Zn-based oxide, an In—Yb—Zn-based oxide,or an In—Lu—Zn-based oxide; a two-component metal oxide such as anIn—Zn-based oxide, a Sn—Zn-based oxide, an Al—Zn-based oxide, aZn—Mg-based oxide, a Sn—Mg-based oxide, an In—Mg-based oxide, or anIn—Ga-based oxide; a single-component metal oxide, such as an In-basedoxide, a Sn-based oxide, or a Zn-based oxide; and the like.

As an example, FIG. 9A illustrates a model of a medium group included ina layered structure of an In—Ga—Zn—O-based material.

In the medium group included in the layered structure of theIn—Ga—Zn—O-based material in FIG. 9A, in the order starting from thetop, an In atom proximate to three tetracoordinate O atoms in each of anupper half and a lower half is bonded to a Zn atom proximate to onetetracoordinate O atom in an upper half, the Zn atom is bonded to a Gaatom proximate to one tetracoordinate O atom in each of an upper halfand a lower half through three tetracoordinate O atoms in a lower halfwith respect to the Zn atom, and the Ga atom is bonded to an In atomproximate to three tetracoordinate O atoms in each of an upper half anda lower half through one tetracoordinate O atom in a lower half withrespect to the Ga atom. A plurality of such medium groups are bonded, sothat a large group is formed.

FIG. 9B illustrates a large group including three medium groups. Notethat FIG. 9C illustrates an atomic arrangement in the case where thelayered structure in FIG. 9B is observed from the c-axis direction.[0153]

Here, since electric charge of a (hexacoordinate or pentacoordinate) Inatom, electric charge of a (tetracoordinate) Zn atom, and electriccharge of a (pentacoordinate) Ga atom are +3, +2, and +3, respectively,electric charge of a small group including any of an In atom, a Zn atom,and a Ga atom is 0. As a result, the total electric charge of a mediumgroup having a combination of such small groups is always 0.

In order to form the layered structure of the In—Ga—Zn—O-based material,a large group can be formed using not only the medium group illustratedin FIG. 9A but also a medium group in which the arrangement of the Inatom, the Ga atom, and the Zn atom is different from that in FIG. 9A.

Specifically, when the large group illustrated in FIG. 9B is repeated,an In—Ga—Zn—O-based material can be obtained. Note that a layeredstructure of the obtained In—Ga—Zn—O-based material can be expressed asa composition formula, InGaO₃(ZnO)_(n) (n is a natural number).

In the case where n=1 (InGaZnO₄), a crystal structure illustrated inFIG. 10A can be obtained, for example. Note that in the crystalstructure in FIG. 10A, a Ga atom and an In atom each have five ligandsas described in FIG. 7B, a structure in which Ga is replaced with In canbe obtained.

In the case where n=2 (InGaZn₂O₅), a crystal structure illustrated inFIG. 10B can be obtained, for example. Note that in the crystalstructure in FIG. 10B, a Ga atom and an In atom each have five ligandsas described in FIG. 7B, a structure in which Ga is replaced with In canbe obtained.

In the case of forming a film of an In—Ga—Zn—O-based material as theoxide semiconductor film by a sputtering method, it is preferable to usean In—Ga—Zn—O target having the following atomic ratio: the atomic ratioof In:Ga:Zn is 1:1:1, 4:2:3, 3:1:2, 1:1:2, 2:1:3, or 3:1:4. When theoxide semiconductor film is formed using an In—Ga—Zn—O target having theabove atomic ratio, a polycrystal oxide semiconductor or CAAC-OS iseasily formed.

In the case of forming a film of an In—Sn—Zn—O based material as anoxide semiconductor film by a sputtering method, it is preferable to usean In—Sn—Zn—O target having an atomic ratio of In:Sn:Zn=1:1:1, 2:1:3,1:2:2, or 20:45:35. When an oxide semiconductor film is formed using anIn—Sn—Zn—O target having the aforementioned atomic ratio, a polycrystaloxide semiconductor or a CAAC-OS is easily formed.

An example of a transistor that includes an In—Sn—Zn—O film as an oxidesemiconductor film is described with reference to FIGS. 11A and 11B andthe like.

FIGS. 11A and 11B illustrate a coplanar transistor having a top-gatetop-contact structure. FIG. 11A is a top view of the transistor. FIG.11B is a cross-sectional view along dashed-dotted line Al-A2 in FIG.11A.

The transistor illustrated in FIG. 11B includes a substrate 500; a baseinsulating film 502 provided over the substrate 500; a protectiveinsulating film 504 provided in the periphery of the base insulatingfilm 502; an oxide semiconductor film 506 provided over the baseinsulating film 502 and the protective insulating film 504 and includinga high-resistance region 506 a and low-resistance regions 506 b; a gateinsulating film 508 provided over the oxide semiconductor film 506; agate electrode 510 provided to overlap with the oxide semiconductor film506 with the gate insulating film 508 positioned therebetween; asidewall insulating film 512 provided in contact with a side surface ofthe gate electrode 510; a pair of electrodes 514 provided in contactwith at least the low-resistance regions 506 b; an interlayer insulatingfilm 516 provided to cover at least the oxide semiconductor film 506,the gate electrode 510, and the pair of electrodes 514; and a wiring 518provided to be connected to at least one of the pair of electrodes 514through an opening formed in the interlayer insulating film 516.

Although not illustrated, a protective film may be provided to cover theinterlayer insulating film 516 and the wiring 518. With the protectivefilm, a minute amount of a leakage current generated by surfaceconduction of the interlayer insulating film 516 can be reduced and thusthe off-state current of the transistor can be reduced.

Another example of a transistor that includes an In—Sn—Zn—O film as anoxide semiconductor film is described.

FIGS. 12A and 12B illustrate the structure of a transistor manufacturedin this embodiment. FIG. 12A is the top view of the transistor. FIG. 12Bis the cross-sectional view along dashed-dotted line B1-B2 in FIG. 12A.

The transistor illustrated in FIG. 12B includes a substrate 600; a baseinsulating film 602 provided over the substrate 600; an oxidesemiconductor film 606 provided over the base insulating film 602; apair of electrodes 614 in contact with the oxide semiconductor film 606;a gate insulating film 608 provided over the oxide semiconductor film606 and the pair of electrodes 614; a gate electrode 610 provided tooverlap with the oxide semiconductor film 606 with the gate insulatingfilm 608 positioned therebetween; an interlayer insulating film 616provided to cover the gate insulating film 608 and the gate electrode610; wirings 618 connected to the pair of electrodes 614 throughopenings formed in the interlayer insulating film 616; and a protectivefilm 620 provided to cover the interlayer insulating film 616 and thewirings 618.

As the substrate 600, a glass substrate is used. As the base insulatingfilm 602, a silicon oxide film is used. As the oxide semiconductor film606, an In—Sn—Zn—O film is used. As the pair of electrodes 614, atungsten film is used. As the gate insulating film 608, a silicon oxidefilm is used. The gate electrode 610 has a stacked structure of atantalum nitride film and a tungsten film. The interlayer insulatingfilm 616 has a stacked structure of a silicon oxynitride film and apolyimide film. The wirings 618 each have a stacked structure in which atitanium film, an aluminum film, and a titanium film are formed in thisorder. As the protective film 620, a polyimide film is used.

Note that in the transistor having the structure illustrated in FIG.12A, the width of a portion where the gate electrode 610 overlaps withone of the pair of electrodes 614 is referred to as L_(ov). Similarly,the width of a portion of the pair of electrodes 614, which does notoverlap with the oxide semiconductor film 606, is referred to as _(d)W.

This embodiment can be combined with any of the above embodiments.

This application is based on Japanese Patent Application serial No.2011-112139 filed with Japan Patent Office on May 19, 2011, the entirecontents of which are hereby incorporated by reference.

1. A circuit comprising: a voltage converter circuit; and a controlcircuit comprising a protective circuit, the protective circuitcomprising: a first oxide semiconductor transistor; a capacitor; asecond oxide semiconductor transistor; and an operational amplifiercomprising a non-inverting input terminal to which a reference voltageis input, wherein an input voltage is input to one of a source and adrain of the first oxide semiconductor transistor, wherein the other ofthe source and the drain of the first oxide semiconductor transistor iselectrically connected to the capacitor, one of a source and a drain ofthe second oxide semiconductor transistor, and an inverting inputterminal of the operational amplifier, and wherein an element thatgenerates heat in the voltage converter circuit or the control circuitis detected by the first oxide semiconductor transistor adjacent to theelement.
 2. The circuit according to claim 1, wherein an off-statecurrent of the first oxide semiconductor transistor increases as anincrease of a temperature of the first oxide semiconductor transistor.3. The circuit according to claim 2, wherein the capacitor is configuredto accumulate the off-state current as an electric charge.
 4. Thecircuit according to claim 1, wherein the first oxide semiconductortransistor and the element are arranged in a multi-finger layout or acommon-centroid layout.
 5. The circuit according to claim 1, furthercomprising a voltage divider circuit electrically connected to thevoltage converter circuit.
 6. The circuit according to claim 1, whereinthe control circuit further comprises: a voltage regulator circuitelectrically connected to the other of the source and the drain of thefirst oxide semiconductor transistor; a bias generation circuitelectrically connected to the voltage regulator circuit; a referencevoltage generation circuit electrically connected to the voltageregulator circuit; and a band gap reference electrically connected tothe voltage regulator circuit.
 7. The circuit according to claim 1,wherein the voltage converter circuit is a DC-DC converter.
 8. Thecircuit according to claim 1, wherein the voltage converter circuit isan AC-DC converter.
 9. A circuit comprising: a first transistorcomprising an oxide semiconductor layer in a channel region; acapacitor; and an operational amplifier comprising a non-inverting inputterminal to which a reference voltage is input, wherein one of a sourceand a drain of the first transistor is electrically connected to aterminal of the capacitor and an inverting input terminal of theoperational amplifier, and wherein the capacitor is configured toaccumulate an off-state current of the first transistor as an electriccharge so that the accumulated voltage is input to the inverting inputterminal.
 10. The circuit according to claim 9, wherein the off-statecurrent of the first transistor increases as an increase of atemperature of the first transistor.
 11. The circuit according to claim9, further comprising a second transistor comprising an oxidesemiconductor layer in a channel region, wherein one of a source and adrain of the second transistor is electrically connected to the terminalof the capacitor.
 12. The circuit according to claim 9, furthercomprising a voltage converter circuit comprising an element, whereinthe element is adjacent to the first transistor.
 13. The circuitaccording to claim 12, wherein the first transistor and the element arearranged in a multi-finger layout or a common-centroid layout.
 14. Thecircuit according to claim 12, wherein the voltage converter circuit isa DC-DC converter.
 15. The circuit according to claim 12, wherein thevoltage converter circuit is an AC-DC converter.
 16. A circuitcomprising: a first transistor comprising an oxide semiconductor layerin a channel region; a capacitor; and a second transistor comprising anoxide semiconductor layer in a channel region, wherein one of a sourceand a drain of the first transistor is electrically connected to aterminal of the capacitor and one of a source and a drain of the secondtransistor, wherein a ground potential is input to the other of thesource and the drain of the second transistor, wherein the capacitor isconfigured to accumulate an off-state current of the first transistor asan electric charge, and wherein the second transistor is capable ofreleasing by using the electric charge.
 17. The circuit according toclaim 16, the off-state current of the first transistor increases as anincrease of a temperature of the first transistor.
 18. The circuitaccording to claim 16, further comprising a voltage converter circuitcomprising an element, wherein the element is adjacent to the firsttransistor.
 19. The circuit according to claim 18, the first transistorand the element are arranged in a multi-finger layout or acommon-centroid layout.
 20. The circuit according to claim 18, whereinthe voltage converter circuit is a DC-DC converter.
 21. The circuitaccording to claim 18, wherein the voltage converter circuit is an AC-DCconverter.